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Gate-tunable silicon oxide memory based on vertically integrated graphene barristorGate-tunable silicon oxide memory based on vertically integrated graphene barristor
- Alternative Title
- Gate-tunable silicon oxide memory based on vertically integrated graphene barristor
- Authors
- Gunuk Wang
- Issue Date
- 7-12월-2017
- Publisher
- Applied Physics Division, The Korean Physical Society
- Citation
- The 10th International Conference on Advanced Materials and Devices (2017)
- Conference Name
- The 10th International Conference on Advanced Materials and Devices (2017)
- Place
- KO
- Conference Date
- 2017-12-05
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