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Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process at room temperature.
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong MunPyo | - |
| dc.date.accessioned | 2021-08-28T13:48:41Z | - |
| dc.date.available | 2021-08-28T13:48:41Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2016-09-26 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/27573 | - |
| dc.publisher | Materials Research Society of Korea | - |
| dc.title | Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process at room temperature. | - |
| dc.title.alternative | Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process at room temperature. | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Hong MunPyo | - |
| dc.identifier.bibliographicCitation | ICMAP2016(The 6th International Conference on Microelectronics and Plasma Technology) | - |
| dc.relation.isPartOf | ICMAP2016(The 6th International Conference on Microelectronics and Plasma Technology) | - |
| dc.relation.isPartOf | ICMAP2016(The 6th International Conference on Microelectronics and Plasma Technology) | - |
| dc.citation.title | ICMAP2016(The 6th International Conference on Microelectronics and Plasma Technology) | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2016-09-26 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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