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Non volatile memory device using mobileproton in gate insulator by hydrogen neutralbeam treatment
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong MunPyo | - |
| dc.date.accessioned | 2021-08-28T23:29:24Z | - |
| dc.date.available | 2021-08-28T23:29:24Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2015-08-25 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/33323 | - |
| dc.publisher | (사)한국진공학회(KVS) | - |
| dc.title | Non volatile memory device using mobileproton in gate insulator by hydrogen neutralbeam treatment | - |
| dc.title.alternative | Non volatile memory device using mobileproton in gate insulator by hydrogen neutralbeam treatment | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Hong MunPyo | - |
| dc.identifier.bibliographicCitation | 제49회 한국진공학회 하계학술대회 | - |
| dc.relation.isPartOf | 제49회 한국진공학회 하계학술대회 | - |
| dc.relation.isPartOf | 제49회 한국진공학회 하계학술대회 | - |
| dc.citation.title | 제49회 한국진공학회 하계학술대회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2015-08-24 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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