Nano-Crystal Silicon and Amorphous Indium Gallium Zinc Oxide Base Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process during Normal Thin Film Transistor Process at Room Temperature
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong MunPyo | - |
dc.date.accessioned | 2021-08-28T23:31:16Z | - |
dc.date.available | 2021-08-28T23:31:16Z | - |
dc.date.created | 2021-04-22 | - |
dc.date.issued | 2015-08-21 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/33373 | - |
dc.publisher | KIDS,SID,KDIA | - |
dc.title | Nano-Crystal Silicon and Amorphous Indium Gallium Zinc Oxide Base Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process during Normal Thin Film Transistor Process at Room Temperature | - |
dc.title.alternative | Nano-Crystal Silicon and Amorphous Indium Gallium Zinc Oxide Base Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process during Normal Thin Film Transistor Process at Room Temperature | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | Hong MunPyo | - |
dc.identifier.bibliographicCitation | iMiD2015(The 15th International Meeting on Information Display) | - |
dc.relation.isPartOf | iMiD2015(The 15th International Meeting on Information Display) | - |
dc.relation.isPartOf | iMiD2015(The 15th International Meeting on Information Display) | - |
dc.citation.title | iMiD2015(The 15th International Meeting on Information Display) | - |
dc.citation.conferencePlace | KO | - |
dc.citation.conferenceDate | 2015-08-18 | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 1 | - |
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