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Ion-implantation for Epitaxial Lateral Overgrowth of GaN on Patterned Sapphire SubstrateIon-implantation for Epitaxial Lateral Overgrowth of GaN on Patterned Sapphire Substrate

Alternative Title
Ion-implantation for Epitaxial Lateral Overgrowth of GaN on Patterned Sapphire Substrate
Authors
BYUN, Dong Jin
Issue Date
13-11월-2014
Publisher
Rare Isotope Science Project
Citation
The 18th International Conference on Accelerators and Beam Utilizations
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/37100
Conference Name
The 18th International Conference on Accelerators and Beam Utilizations
Place
KO
Conference Date
2014-11-12
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College of Engineering > Department of Materials Science and Engineering > 2. Conference Papers

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BYUN, Dong Jin
공과대학 (신소재공학부)
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