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Effect of the Bombardment of Negative Oxygen Ions on Gate Bias Stability of InGaZnO Thin Film TransistorsEffect of the Bombardment of Negative Oxygen Ions on Gate Bias Stability of InGaZnO Thin Film Transistors
- Alternative Title
- Effect of the Bombardment of Negative Oxygen Ions on Gate Bias Stability of InGaZnO Thin Film Transistors
- Authors
- Hong MunPyo
- Issue Date
- 28-8월-2014
- Publisher
- KIDS,SID,KDIA
- Citation
- iMiD2014(The 14th International Meeting on Information Display)
- Conference Name
- iMiD2014(The 14th International Meeting on Information Display)
- Place
- KO
- Conference Date
- 2014-08-26
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Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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