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Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process between SiO2 deposition processes at room temperatureNonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process between SiO2 deposition processes at room temperature
- Alternative Title
- Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process between SiO2 deposition processes at room temperature
- Authors
- Hong MunPyo
- Issue Date
- 9-7월-2014
- Publisher
- KVS(The Korean Vaccuum Society)
- Citation
- ICMAP 2014 - International Confernce on Microelectronics and Plasma Technology 2014
- Conference Name
- ICMAP 2014 - International Confernce on Microelectronics and Plasma Technology 2014
- Place
- KO
- Conference Date
- 2014-07-08
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Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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