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The crystallinity of GaN Epitaxial growth using AlN buffer layer on Patterned Sapphire SubstrateThe crystallinity of GaN Epitaxial growth using AlN buffer layer on Patterned Sapphire Substrate

Alternative Title
The crystallinity of GaN Epitaxial growth using AlN buffer layer on Patterned Sapphire Substrate
Authors
BYUN, Dong Jin
Issue Date
2-6월-2014
Publisher
(사)한국광전자학회
Citation
The 5th International Conference on White LEDs and Solid State Lighting
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/40152
Conference Name
The 5th International Conference on White LEDs and Solid State Lighting
Place
KO
Conference Date
2014-06-02
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College of Engineering > Department of Materials Science and Engineering > 2. Conference Papers

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BYUN, Dong Jin
공과대학 (신소재공학부)
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