Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Introduction of SiO2 mask layer for Selective Area Growth of GaN Introduction of SiO2 mask layer for Selective Area Growth of GaN on Patterned Sapphire Substrate
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-29T11:39:08Z | - |
| dc.date.available | 2021-08-29T11:39:08Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2014-05-15 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/40607 | - |
| dc.publisher | 한국재료학회 | - |
| dc.title | Introduction of SiO2 mask layer for Selective Area Growth of GaN Introduction of SiO2 mask layer for Selective Area Growth of GaN on Patterned Sapphire Substrate | - |
| dc.title.alternative | Introduction of SiO2 mask layer for Selective Area Growth of GaN on Patterned Sapphire Substrate | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | 2014년도 한국재료학회 춘계학술발표대회 및 제 26회 신소재 심포지엄 | - |
| dc.relation.isPartOf | 2014년도 한국재료학회 춘계학술발표대회 및 제 26회 신소재 심포지엄 | - |
| dc.relation.isPartOf | 2014년도 한국재료학회 춘계학술발표대회 및 제 26회 신소재 심포지엄 | - |
| dc.citation.title | 2014년도 한국재료학회 춘계학술발표대회 및 제 26회 신소재 심포지엄 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2014-05-15 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.