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Introduction of SiO2 mask layer for Selective Area Growth of GaN Introduction of SiO2 mask layer for Selective Area Growth of GaN on Patterned Sapphire SubstrateIntroduction of SiO2 mask layer for Selective Area Growth of GaN on Patterned Sapphire Substrate
- Alternative Title
- Introduction of SiO2 mask layer for Selective Area Growth of GaN on Patterned Sapphire Substrate
- Authors
- BYUN, Dong Jin
- Issue Date
- 15-5월-2014
- Publisher
- 한국재료학회
- Citation
- 2014년도 한국재료학회 춘계학술발표대회 및 제 26회 신소재 심포지엄
- Conference Name
- 2014년도 한국재료학회 춘계학술발표대회 및 제 26회 신소재 심포지엄
- Place
- KO
- Conference Date
- 2014-05-15
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