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Memory Characteristics of Doubly Stacked Nano-Floating Gate Memory Devices with Channels of Single ZnO Nanowires
Kim, Sungsu; Cho, Kyoungah; Kwak, Kiyeol;
Kim, Sangsig
Article
Issue Date
2013
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6196 - 6198
Publisher
AMER SCIENTIFIC PUBLISHERS
1
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Author
Cho, Kyoungah
1
Kim, Sungsu
1
Kwak, Kiyeol
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Kim, Sang sig
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Al Nanoparticle
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Doubly Stacked Memory
1
FIELD-EFFECT TRANSISTORS
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NONVOLATILE MEMORY
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ZnO Nanowire
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Article
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English
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scie
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