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The effect of mixed gas (Ar+H2) plasma pretreatment of copper CVD using Cu(dmamb)2

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-29T16:54:29Z-
dc.date.available2021-08-29T16:54:29Z-
dc.date.created2021-04-22-
dc.date.issued2013-07-02-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/43928-
dc.publisher한국물리학회-
dc.titleThe effect of mixed gas (Ar+H2) plasma pretreatment of copper CVD using Cu(dmamb)2-
dc.title.alternativeThe effect of mixed gas (Ar+H2) plasma pretreatment of copper CVD using Cu(dmamb)2-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitationThe 16th International Symposium on the Physics of Semiconductors and Applications-
dc.relation.isPartOfThe 16th International Symposium on the Physics of Semiconductors and Applications-
dc.relation.isPartOfThe 16th International Symposium on the Physics of Semiconductors and Applications-
dc.citation.titleThe 16th International Symposium on the Physics of Semiconductors and Applications-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2013-07-02-
dc.type.rimsCONF-
dc.description.journalClass1-
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