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Fine Tuning of Termination Capacitance and Neutral Beam Energy Dependent Controlling of Oxygen Contents in Undoped Nano-Crytral Silicon Thin Film by using Neutral Beam Assisted ICP CVD

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dc.contributor.authorHong MunPyo-
dc.date.accessioned2021-08-29T18:46:10Z-
dc.date.available2021-08-29T18:46:10Z-
dc.date.created2021-04-22-
dc.date.issued2013-02-06-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/44924-
dc.publisher동부하이텍, 한국반도체산업협회, 한국반도체연구조합-
dc.titleFine Tuning of Termination Capacitance and Neutral Beam Energy Dependent Controlling of Oxygen Contents in Undoped Nano-Crytral Silicon Thin Film by using Neutral Beam Assisted ICP CVD-
dc.typeConference-
dc.contributor.affiliatedAuthorHong MunPyo-
dc.identifier.bibliographicCitation제20회 한국반도체학술대회-
dc.relation.isPartOf제20회 한국반도체학술대회-
dc.relation.isPartOf제20회 한국반도체학술대회-
dc.citation.title제20회 한국반도체학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace웰리힐리파크-
dc.citation.conferenceDate2013-02-04-
dc.type.rimsCONF-
dc.description.journalClass2-
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