Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The effective dislocation reduction of GaN epilayers on a Cone-Shape Patterned Sapphire SubstratesThe effective dislocation reduction of GaN epilayers on a Cone-Shape Patterned Sapphire Substrates
- Alternative Title
- The effective dislocation reduction of GaN epilayers on a Cone-Shape Patterned Sapphire Substrates
- Authors
- BYUN, Dong Jin
- Issue Date
- 16-10월-2012
- Publisher
- International Workshop on Nitride Semiconductors
- Citation
- International Workshop on Nitride Semiconductors 2012
- Conference Name
- International Workshop on Nitride Semiconductors 2012
- Place
- JA
- Conference Date
- 2012-10-14
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.