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Properties of nonpolar Si-doped a-plane (11-20)GaN structures inserted SiNx interlayer with different deposition conditions
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | PARK, JUNG HO | - |
| dc.date.accessioned | 2021-08-29T20:47:55Z | - |
| dc.date.available | 2021-08-29T20:47:55Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2012-02-16 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/46157 | - |
| dc.publisher | 고려대학교 | - |
| dc.title | Properties of nonpolar Si-doped a-plane (11-20)GaN structures inserted SiNx interlayer with different deposition conditions | - |
| dc.title.alternative | Properties of nonpolar Si-doped a-plane (11-20)GaN structures inserted SiNx interlayer with different deposition conditions | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | PARK, JUNG HO | - |
| dc.identifier.bibliographicCitation | 제 19회 한국반도체학술대회 | - |
| dc.relation.isPartOf | 제 19회 한국반도체학술대회 | - |
| dc.relation.isPartOf | 제 19회 한국반도체학술대회 | - |
| dc.citation.title | 제 19회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2012-02-15 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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