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Properties of nonpolar Si-doped a-plane (11-20)GaN structures inserted SiNx interlayer with different deposition conditionsProperties of nonpolar Si-doped a-plane (11-20)GaN structures inserted SiNx interlayer with different deposition conditions
- Alternative Title
- Properties of nonpolar Si-doped a-plane (11-20)GaN structures inserted SiNx interlayer with different deposition conditions
- Authors
- PARK, JUNG HO
- Issue Date
- 16-2월-2012
- Publisher
- 고려대학교
- Citation
- 제 19회 한국반도체학술대회
- Conference Name
- 제 19회 한국반도체학술대회
- Place
- KO
- Conference Date
- 2012-02-15
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- There are no files associated with this item.
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Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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