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Comparison of CE and CB configurations of SiGe HBTs for Power Gain and Stability
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rieh, Jae-Sung | - |
| dc.date.accessioned | 2021-08-29T20:48:01Z | - |
| dc.date.available | 2021-08-29T20:48:01Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2012-02-15 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/46159 | - |
| dc.publisher | KCS | - |
| dc.title | Comparison of CE and CB configurations of SiGe HBTs for Power Gain and Stability | - |
| dc.title.alternative | Comparison of CE and CB configurations of SiGe HBTs for Power Gain and Stability | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
| dc.identifier.bibliographicCitation | 제 19회 한국반도체학술대회 | - |
| dc.relation.isPartOf | 제 19회 한국반도체학술대회 | - |
| dc.relation.isPartOf | proceeding of 반도체학술대회 | - |
| dc.citation.title | 제 19회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2012-02-15 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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