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Growth and characteristics of epitaxial lateral overgrown a-plane GaN on r-plane sapphire using high-dose N+-ion-implantationGrowth and characteristics of epitaxial lateral overgrown a-plane GaN on r-plane sapphire using high-dose N+-ion-implantation
- Alternative Title
- Growth and characteristics of epitaxial lateral overgrown a-plane GaN on r-plane sapphire using high-dose N+-ion-implantation
- Authors
- BYUN, Dong Jin
- Issue Date
- 27-10월-2011
- Publisher
- 사단법인 한국재료학회
- Citation
- 2011 한국재료학회 추계학술발표대회 및 제21회 신소재 심포지엄
- Conference Name
- 2011 한국재료학회 추계학술발표대회 및 제21회 신소재 심포지엄
- Place
- KO
- Conference Date
- 2011-10-27
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