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Atomic scale gate electrode formed by a charged defect on GaAs(110)Atomic scale gate electrode formed by a charged defect on GaAs(110)

Alternative Title
Atomic scale gate electrode formed by a charged defect on GaAs(110)
Authors
Donghun Lee
Issue Date
25-8월-2010
Publisher
International Vacuum Congress
Citation
IVC-18 (18th International Vacuum Congress) Joint International Conference
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/47160
Conference Name
IVC-18 (18th International Vacuum Congress) Joint International Conference
Place
CC
Conference Date
2010-08-23
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College of Science > Department of Physics > 2. Conference Papers

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