Using a NiZn solid solution layer to produce high-barrier height Schottky contact to semipolar (20-21) n-type GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cha, Jung-Suk | - |
dc.contributor.author | Lee, Tae-Ju | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-08-30T03:59:49Z | - |
dc.date.available | 2021-08-30T03:59:49Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2021-01-25 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/50067 | - |
dc.description.abstract | Formation of high barrier height Schottky contacts to semipolar (20-21) n-GaN was realized by using a NiZn solid solution (NiZn s.s.) layer. The X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS) results exhibited the creation of Ni-oxides and N-gallide phases when the contact samples were annealed at 650 degrees C. The XPS Ga 2p core levels attained from the NiZn s.s./GaN interface underwent a shift toward lower energies upon annealing. STEM element mapping and XRD results illustrated Ga outdiffusion in the 650 degrees C-annealed sample. The current-voltage (I-V) plots of the samples revealed that the reverse leakage characteristics were improved with an increase in the annealing temperature from 0 to 650 degrees C. The ideality factors and Schottky barrier heights (SBHs) assessed by the I-V method were in the range 2.13-2.73 and 0.54-0.68 eV, respectively. With increasing annealing temperature, the ideality factor decreased, while the SBH increased. It was also shown that the barrier inhomogeneity and capacitance-voltage methods produced much larger SBHs of 0.61-1.54 eV than the I-V method. Based on the XRD, STEM, and XPS analyses, the dependence of the SBHs on the annealing temperature is described. (C) 2020 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | INHOMOGENEITY | - |
dc.title | Using a NiZn solid solution layer to produce high-barrier height Schottky contact to semipolar (20-21) n-type GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.157003 | - |
dc.identifier.scopusid | 2-s2.0-85091487594 | - |
dc.identifier.wosid | 000579878700058 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.852 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 852 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | INHOMOGENEITY | - |
dc.subject.keywordAuthor | Semipolar GaN | - |
dc.subject.keywordAuthor | NiZn solid Solution | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | Barrier inhomogeneity | - |
dc.subject.keywordAuthor | Capacitance-voltage method | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.