Using a NiZn solid solution layer to produce high-barrier height Schottky contact to semipolar (20-21) n-type GaN
- Authors
- Cha, Jung-Suk; Lee, Tae-Ju; Seong, Tae-Yeon
- Issue Date
- 25-1월-2021
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Semipolar GaN; NiZn solid Solution; Schottky barrier height; Barrier inhomogeneity; Capacitance-voltage method
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.852
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 852
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/50067
- DOI
- 10.1016/j.jallcom.2020.157003
- ISSN
- 0925-8388
- Abstract
- Formation of high barrier height Schottky contacts to semipolar (20-21) n-GaN was realized by using a NiZn solid solution (NiZn s.s.) layer. The X-ray diffraction (XRD) and X-ray photoemission spectroscopy (XPS) results exhibited the creation of Ni-oxides and N-gallide phases when the contact samples were annealed at 650 degrees C. The XPS Ga 2p core levels attained from the NiZn s.s./GaN interface underwent a shift toward lower energies upon annealing. STEM element mapping and XRD results illustrated Ga outdiffusion in the 650 degrees C-annealed sample. The current-voltage (I-V) plots of the samples revealed that the reverse leakage characteristics were improved with an increase in the annealing temperature from 0 to 650 degrees C. The ideality factors and Schottky barrier heights (SBHs) assessed by the I-V method were in the range 2.13-2.73 and 0.54-0.68 eV, respectively. With increasing annealing temperature, the ideality factor decreased, while the SBH increased. It was also shown that the barrier inhomogeneity and capacitance-voltage methods produced much larger SBHs of 0.61-1.54 eV than the I-V method. Based on the XRD, STEM, and XPS analyses, the dependence of the SBHs on the annealing temperature is described. (C) 2020 Elsevier B.V. All rights reserved.
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