Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Precise Control of the Oxidation State of PbS Quantum Dots Using Rapid Thermal Annealing for Infrared Photodetectors
- Authors
- Jin, Junyoung; Kyhm, Jihoon; Hwang, Do Kyung; Lee, Kyeong-Seok; Seong, Tae-Yeon; Hwang, Gyu Weon
- Issue Date
- 22-Jan-2021
- Publisher
- AMER CHEMICAL SOC
- Keywords
- PbS quantum dots; infrared photodetectors; annealing; RTA; oxidation
- Citation
- ACS APPLIED NANO MATERIALS, v.4, no.1, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED NANO MATERIALS
- Volume
- 4
- Number
- 1
- Start Page
- 1
- End Page
- 6
- ISSN
- 2574-0970
- Abstract
- We report the effect of oxidation on PbS quantum dot (QD) photodetectors using rapid thermal annealing (RTA) and furnace annealing in air at different durations and temperatures. Air-annealed QD films using RTA had an improved specific detectivity of up to 1.51 X 10(12) Jones with a responsivity of up to 1.895 X 10(3) A/W at 1 kHz. We used transient photocurrent decay measurements, X-ray photoelectron spectroscopy, and frequency response measurements to investigate the origin of this effect. We found that short-term annealing with RTA in air increases the product of carrier mobility and carrier lifetime (mu tau) of the QD photoconductors, which leads to high photoconductive gain and bandwidth.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- SEONG, TAE YEON
- College of Engineering (Department of Materials Science and Engineering)