Assessment of the (010) beta-Ga2O3 surface and substrate specification
DC Field | Value | Language |
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dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Eddy, Charles R. | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.contributor.author | Hite, Jennifer K. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.date.accessioned | 2021-08-30T04:35:16Z | - |
dc.date.available | 2021-08-30T04:35:16Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2021-01 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/50229 | - |
dc.description.abstract | Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (beta -Ga2O3) have led to the commercialization of large-area beta -Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) beta -Ga2O3 surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of beta -Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | POWER | - |
dc.subject | VOLTAGE | - |
dc.title | Assessment of the (010) beta-Ga2O3 surface and substrate specification | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/6.0000725 | - |
dc.identifier.scopusid | 2-s2.0-85099233184 | - |
dc.identifier.wosid | 000603067800001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.39, no.1 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 39 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | VOLTAGE | - |
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