Assessment of the (010) beta-Ga2O3 surface and substrate specification
- Authors
- Mastro, Michael A.; Eddy, Charles R.; Tadjer, Marko J.; Hite, Jennifer K.; Kim, Jihyun; Pearton, Stephen J.
- Issue Date
- 1월-2021
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.39, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 39
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/50229
- DOI
- 10.1116/6.0000725
- ISSN
- 0734-2101
- Abstract
- Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (beta -Ga2O3) have led to the commercialization of large-area beta -Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) beta -Ga2O3 surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of beta -Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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