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STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAsSTM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- Alternative Title
- STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs
- Authors
- Donghun Lee
- Issue Date
- 18-3월-2009
- Publisher
- American Physical Society
- Citation
- Annual Meeting of the American Physical Society
- Conference Name
- Annual Meeting of the American Physical Society
- Place
- US
- Conference Date
- 2009-03-16
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Collections - College of Science > Department of Physics > 2. Conference Papers
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