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Electrical spin transport in a GaAs (110) channel
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hansung | - |
| dc.contributor.author | Park, Hee Gyum | - |
| dc.contributor.author | Min, Byoung-Chul | - |
| dc.contributor.author | Han, Suk Hee | - |
| dc.contributor.author | Chang, Joonyeon | - |
| dc.contributor.author | Kim, Hyung-jun | - |
| dc.contributor.author | Koo, Hyun Cheol | - |
| dc.date.accessioned | 2021-08-30T09:40:50Z | - |
| dc.date.available | 2021-08-30T09:40:50Z | - |
| dc.date.created | 2021-06-18 | - |
| dc.date.issued | 2020-11 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/51963 | - |
| dc.description.abstract | A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintmnics due to the longer spin diffusion. By utilizing optimal temperature process and VIII flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Th20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER | - |
| dc.subject | PRECESSION | - |
| dc.title | Electrical spin transport in a GaAs (110) channel | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Koo, Hyun Cheol | - |
| dc.identifier.doi | 10.1016/j.cap.2020.08.009 | - |
| dc.identifier.scopusid | 2-s2.0-85091257229 | - |
| dc.identifier.wosid | 000577638600015 | - |
| dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.20, no.11, pp.1295 - 1298 | - |
| dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
| dc.citation.title | CURRENT APPLIED PHYSICS | - |
| dc.citation.volume | 20 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 1295 | - |
| dc.citation.endPage | 1298 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002647970 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | PRECESSION | - |
| dc.subject.keywordAuthor | GaAs (110) | - |
| dc.subject.keywordAuthor | Hanle effect | - |
| dc.subject.keywordAuthor | Spin diffusion length | - |
| dc.subject.keywordAuthor | Spin injection | - |
| dc.subject.keywordAuthor | Tb20Fe62Co18 | - |
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