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Electrical spin transport in a GaAs (110) channel
- Authors
- Kim, Hansung; Park, Hee Gyum; Min, Byoung-Chul; Han, Suk Hee; Chang, Joonyeon; Kim, Hyung-jun; Koo, Hyun Cheol
- Issue Date
- 11월-2020
- Publisher
- ELSEVIER
- Keywords
- GaAs (110); Hanle effect; Spin diffusion length; Spin injection; Tb20Fe62Co18
- Citation
- CURRENT APPLIED PHYSICS, v.20, no.11, pp.1295 - 1298
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 20
- Number
- 11
- Start Page
- 1295
- End Page
- 1298
- ISSN
- 1567-1739
- Abstract
- A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintmnics due to the longer spin diffusion. By utilizing optimal temperature process and VIII flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Th20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.
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