Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Yujin | - |
dc.contributor.author | Min, Kwan Hong | - |
dc.contributor.author | Bae, Soohyun | - |
dc.contributor.author | Kang, Yoonmook | - |
dc.contributor.author | Kim, Donghwan | - |
dc.contributor.author | Lee, Hae-Seok | - |
dc.date.accessioned | 2021-08-30T09:43:08Z | - |
dc.date.available | 2021-08-30T09:43:08Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-11 | - |
dc.identifier.issn | 1996-1073 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/51988 | - |
dc.description.abstract | In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the P-max point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | LIFETIME | - |
dc.title | Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Yoonmook | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.contributor.affiliatedAuthor | Lee, Hae-Seok | - |
dc.identifier.doi | 10.3390/en13215783 | - |
dc.identifier.wosid | 000588942600001 | - |
dc.identifier.bibliographicCitation | ENERGIES, v.13, no.21 | - |
dc.relation.isPartOf | ENERGIES | - |
dc.citation.title | ENERGIES | - |
dc.citation.volume | 13 | - |
dc.citation.number | 21 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.subject.keywordPlus | LIFETIME | - |
dc.subject.keywordAuthor | multicrystalline silicon | - |
dc.subject.keywordAuthor | trapping effect | - |
dc.subject.keywordAuthor | photoconductance | - |
dc.subject.keywordAuthor | grain boundary | - |
dc.subject.keywordAuthor | hydrogen passivation | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.