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Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer

Authors
Jung, YujinMin, Kwan HongBae, SoohyunKang, YoonmookKim, DonghwanLee, Hae-Seok
Issue Date
11월-2020
Publisher
MDPI
Keywords
multicrystalline silicon; trapping effect; photoconductance; grain boundary; hydrogen passivation
Citation
ENERGIES, v.13, no.21
Indexed
SCIE
SCOPUS
Journal Title
ENERGIES
Volume
13
Number
21
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/51988
DOI
10.3390/en13215783
ISSN
1996-1073
Abstract
In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the P-max point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.
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Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL) > Department of Energy and Environment > 1. Journal Articles
College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles

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공과대학 (신소재공학부)
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