A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors
- Authors
- Cho, Sung Joon; Kim, Min Je; Wu, Ziang; Son, Jae Hoon; Jeong, Sang Young; Lee, Sungjoo; Cho, Jeong Ho; Woo, Han Young
- Issue Date
- 16-9월-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- organic field-effect transistor; A-D-A structure; OFET; charge polarity; ambipolar transistor
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.37, pp.41842 - 41851
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 12
- Number
- 37
- Start Page
- 41842
- End Page
- 41851
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/53144
- DOI
- 10.1021/acsami.0c11561
- ISSN
- 1944-8244
- Abstract
- In this study, we synthesize four different kinds of bis( alkylsulfanyl)methylene-substituted 4,9-dihydro- sindaceno[1,2-b:5,6-b'] dithiophene (IDT)-based acceptor-donor-acceptor (A-D-A) type small molecules (IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC) by incorporating electron-withdrawing halogen atoms or electron-releasing thiophene spacers. Herein, enhanced structural planarity and crystalline intermolecular packing are induced by the sp(2)-hybridized C = C double bond side chains and sulfur-sulfur chalcogen interactions. The fine control of intramolecular charge transfer modulates the electrochemical characteristics and the resulting carrier polarity in organic field-effect transistors (OFETs). Well-balanced ambipolar, n-dominant, and p-dominant charge transport properties are successfully demonstrated in OFETs by modulating the electron-donating or withdrawing strength based on the A-D-A structural motif, resulting in hole/electron mobilities of 0.599/0.553, 0.003/0.019, 0.092/0.897, and 0.683/0.103 cm(2)/V.s for IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC respectively, after thermal annealing at 200 degrees C. Thermal annealing of the as-cast films improves the intermolecular packing in an edge-on fashion, which is investigated in detail by grazing incidence X-ray scattering. Finally, complementary logic circuits, i.e., NOT, NAND, and NOR, are fabricated by assembling p-dominant IDSTIC and n-dominant IDSIC-4Cl OFETs. Therefore, a simple and efficient molecular design strategy for fine tuning the charge polarity and charge transport properties of OFET devices is presented.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Chemistry > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.