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Transparent phototransistor with high responsivity, sensitivity, and detectivity from heterojunction metal oxide semiconductors

Authors
Lee, JongchanKim, Hee-OkPi, Jae-EunNam, SoojiKang, Seung-YoulKwon, Kwang-HoCho, Sung Haeng
Issue Date
14-9월-2020
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.117, no.11
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
117
Number
11
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/53163
DOI
10.1063/5.0014562
ISSN
0003-6951
Abstract
In this work, the high-performance transparent Al:InZnSnO/InZnO/Al:InZnSnO tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1cm(2)/V.s and an excellent high photoresponsivity of 25 000A/W, a photosensitivity of 3.3x10(7), a specific detectivity of 4.3x10(17)cm.Hz(1/2).W-1 under the illumination at 460nm with an intensity of 140 mu W/cm(2). The persistent photoconductivity inherent in phototransistors made of oxide semiconductors overcome by a pulsed gate bias with 1 mu s, which accelerates the recombination of photogenerated holes with electrons. This demonstrates that the transparent photosensor array can be integrated monolithically on the display without appreciable loss of transparency for high functionality such as large area image sensor.
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