Plasma Parameters and Silicon Etching Kinetics in C4F8 + O-2 + Ar Gas Mixture: Effect of Component Mixing Ratios
DC Field | Value | Language |
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dc.contributor.author | Lee, Byung Jun | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Nam, Yunho | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-08-30T16:05:50Z | - |
dc.date.available | 2021-08-30T16:05:50Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.issn | 0272-4324 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/53686 | - |
dc.description.abstract | In this work, we investigated the possibidlxlity to control both gas-phase chemistry and silicon etching kinetics in C4F8 + O-2 + Ar inductively coupled plasma by changes in O-2/Ar, C4F8/O(2)and C4F8/Ar mixing ratios at the constant fraction of the rest component (50%), gas pressure (10 mTorr), input power (700 W) and bias power (200 W). The combination of plasma diagnostics and modeling tools allowed one: (a) to compare the effects of gas mixing ratios on both steady-state plasma parameters and densities of active species; (b) to figure out key processes which determine the fluorine atom formation/decay balance in each gas system; and (c) to analyze the differences in Si etching kinetics in terms of process-condition-dependent effective reaction probability. It was shown that the maximum changes in gas-phase chemistry take place in O-2-rich plasmas due to CFx + O/O(D-1) -> CFx-1O + F, CFxO + e -> CFx-1O + F + e and CFO + O/O(D-1) -> CO2 + F stepwise dissociation pathways. It was suggested also that the effective probability for Si + xF -> SiF(x)reaction may be controlled by either fluorocarbon film thickness (in C4F8-rich plasmas) or O atom flux (in Ar and O-2-rich plasmas) through the balance of adsorption sites on the etched surface. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | INDUCTIVELY-COUPLED PLASMAS | - |
dc.subject | THIN-FILMS | - |
dc.subject | MODEL | - |
dc.subject | SIO2 | - |
dc.subject | MECHANISMS | - |
dc.subject | CHEMISTRY | - |
dc.subject | DENSITY | - |
dc.subject | AR | - |
dc.subject | SELECTIVITY | - |
dc.subject | ADDITIVES | - |
dc.title | Plasma Parameters and Silicon Etching Kinetics in C4F8 + O-2 + Ar Gas Mixture: Effect of Component Mixing Ratios | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1007/s11090-020-10097-9 | - |
dc.identifier.scopusid | 2-s2.0-85086384056 | - |
dc.identifier.wosid | 000539952800001 | - |
dc.identifier.bibliographicCitation | PLASMA CHEMISTRY AND PLASMA PROCESSING, v.40, no.5, pp.1365 - 1380 | - |
dc.relation.isPartOf | PLASMA CHEMISTRY AND PLASMA PROCESSING | - |
dc.citation.title | PLASMA CHEMISTRY AND PLASMA PROCESSING | - |
dc.citation.volume | 40 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1365 | - |
dc.citation.endPage | 1380 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Fluids & Plasmas | - |
dc.subject.keywordPlus | INDUCTIVELY-COUPLED PLASMAS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | AR | - |
dc.subject.keywordPlus | SELECTIVITY | - |
dc.subject.keywordPlus | ADDITIVES | - |
dc.subject.keywordAuthor | C4F8-based plasma | - |
dc.subject.keywordAuthor | Diagnostics | - |
dc.subject.keywordAuthor | Modeling | - |
dc.subject.keywordAuthor | Reaction kinetics | - |
dc.subject.keywordAuthor | Etching | - |
dc.subject.keywordAuthor | Polymerization | - |
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