Origin of exciplex degradation in organic light emitting diodes: Thermal stress effects over glass transition temperature of emission layer
DC Field | Value | Language |
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dc.contributor.author | Na, Inyeob | - |
dc.contributor.author | Kim, Ki Ju | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Seo, Youkyung | - |
dc.contributor.author | Kim, Yeeun | - |
dc.contributor.author | Kim, Young Kwan | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.date.accessioned | 2021-08-30T17:32:17Z | - |
dc.date.available | 2021-08-30T17:32:17Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-08-10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/53783 | - |
dc.description.abstract | Exploiting exciplexes in organic light-emitting diodes (OLEDs) to enhance electroluminescence lifetime and quantum efficiency is of considerable interest to researchers. The presence of exciplexes has been demonstrated in a host material interface in a multiple stacked OLED; therefore, understanding the degradation mechanism of exciplexes and host materials is essential to develop highly reliable and uniform OLEDs. Herein, we report thermal stress-driven exciplex degradation in a blue OLED, which comprises 4,4 ' -bis(N-carbazolyl)-,1 ' -biphenyl (CBP) as a host material without dopants. The device structure dependent-electroluminescence clearly confirms the formation of exciplexes surrounding the CBP interfaces at 398 and 450nm, respectively. During the thermal stress over the glass transition temperature (T-g) of the CBP, the spectral intensity of the exciplex decreased significantly, and the ideality factor and characteristic trap energy increased abruptly when the thermal stress temperature was higher than the T-g of CBP, signaling the origin of thermal degradation effects on the exciplex and host material in our OLED. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | HIGH-EFFICIENCY | - |
dc.subject | QUANTUM EFFICIENCY | - |
dc.subject | THEORETICAL-MODEL | - |
dc.subject | HOST MATERIALS | - |
dc.subject | BIPOLAR HOST | - |
dc.subject | LOW-POWER | - |
dc.subject | DEVICES | - |
dc.subject | ELECTROLUMINESCENCE | - |
dc.subject | FLUORESCENCE | - |
dc.subject | ENHANCEMENT | - |
dc.title | Origin of exciplex degradation in organic light emitting diodes: Thermal stress effects over glass transition temperature of emission layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1063/5.0016096 | - |
dc.identifier.scopusid | 2-s2.0-85090191707 | - |
dc.identifier.wosid | 000562797300002 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.117, no.6 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 117 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-EFFICIENCY | - |
dc.subject.keywordPlus | QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | THEORETICAL-MODEL | - |
dc.subject.keywordPlus | HOST MATERIALS | - |
dc.subject.keywordPlus | BIPOLAR HOST | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | ELECTROLUMINESCENCE | - |
dc.subject.keywordPlus | FLUORESCENCE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
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