Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect

Abstract

Spin Hall and Rashba effects are two most fascinating phenomena in the field of spintronics because these effects make it possible to control the spin information by the electrical field. By exploiting spin Hall effect, the magnetoresistances along the longitudinal and transverse directions are modulated at room temperature by controlling the magnetization direction of ferromagnet and the spin precession angle of an InAs-based Rashba channel. The various transport results are explained by the spin current induced by inverse spin Hall effect in a strong Rashba system. This enhancement of operation temperature is implemented by utilizing spin drift effect as well as spin diffusion effect. Also, coherent spin precession is obtained by the injection of the spin current from ferromagnet edge into the quantum well channel.