In situ formation of graphene/metal oxide composites for high-energy microsupercapacitors
- Authors
- Jung, Jaemin; Jeong, Jae Ryeol; Lee, Jungjun; Lee, Sang Hwa; Kim, Soo Young; Kim, Myung Jun; Nah, Junghyo; Lee, Min Hyung
- Issue Date
- 17-7월-2020
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NPG ASIA MATERIALS, v.12, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- NPG ASIA MATERIALS
- Volume
- 12
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/54379
- DOI
- 10.1038/s41427-020-0230-y
- ISSN
- 1884-4049
- Abstract
- The current design trends in the field of electronic devices involve efforts to make these devices smaller, thinner, lighter, and more flexible. The development of such systems is expected to further accelerate, resulting in the production of wearable and Internet-of-Things devices. In this respect, microenergy storage systems with high capacity and fast charge/discharge rates have become important power sources for such devices. In particular, interdigitated microsupercapacitors (MSCs) have exhibited remarkable potential as micropower sources owing to their fast charge/discharge processes, long cycle life, and high power density compared with microbatteries. Nevertheless, facile fabrication of MSCs using interdigitated electrodes remains challenging, as it requires selective decoration of electrodes with pseudocapacitive materials, such as transition metal oxides, to increase their capacitance. In the present study, we developed a simple method for fabricating MSCs involving in situ formation of interdigitated graphene electrodes and ZnO nanorods by photothermal conversion of graphene oxide (GO) and Zn precursors using infrared (IR) laser scribing. The fabricated MSCs exhibit a high stack capacitance of 3.90 F cm(-3)and an energy density of 0.43 mWh cm(-3). Notably, the capacity of the developed material is three times higher than those of previously reported MSCs made from the same type of graphene. In addition, the capacitance retention rate of the fabricated MSC is approximately 70% when measured over 10,000 charging-discharging cycles at a constant current, which evidently indicates a stable device performance.
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