An in-plane WSe2 p-n homojunction two-dimensional diode by laser-induced doping
DC Field | Value | Language |
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dc.contributor.author | Yang, Sujeong | - |
dc.contributor.author | Lee, Geonyeop | - |
dc.contributor.author | Kim, Janghyuk | - |
dc.contributor.author | Yang, Seunghoon | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-08-30T19:38:47Z | - |
dc.date.available | 2021-08-30T19:38:47Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-07-07 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/54420 | - |
dc.description.abstract | Conventional doping schemes of Si microelectronics are inadequate for atomic-thickness two-dimensional (2D) semiconductors, which makes it challenging to construct 2D p-n homojunctions. Herein, a UV laser-assisted doping method with addressability is proposed for seamlessly building a 2D WSe2 p-n homojunction. WSe2 with ambipolar transport properties was exposed to a focused UV laser to form WOx in a self-limiting and area-selective process that induces hole doping in the underlying WSe2 via electron transfer. Different electrical behaviors, ranging from p-p to p-n in-plane homojunctions, were observed between the as-exfoliated (ambipolar) region and the UV laser-treated (p-doped) region, under the electrostatic modulation of the back-gate bias (V-BG), resulting in the multi-state rectification ratios of 895 (positive V-BG) and similar to 4 (negative V-BG). The evolution of the depletion region in the WSe2 in-plane homojunction was analyzed at different V-BG using the scanning photocurrent mapping approach, yielding a high photocurrent of 1.8 nA for positive V-BG, owing to the development of the p-n junction. Finally, a WSe2-based 2D homogeneous complementary inverter is demonstrated with a voltage gain of 1.8, thereby paving the way for next-generation atomic-thickness circuitry. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | OXIDATION | - |
dc.subject | CONVERSION | - |
dc.subject | DEFECTS | - |
dc.title | An in-plane WSe2 p-n homojunction two-dimensional diode by laser-induced doping | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1039/d0tc01790f | - |
dc.identifier.scopusid | 2-s2.0-85087697978 | - |
dc.identifier.wosid | 000545331300034 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.8, no.25, pp.8393 - 8398 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 8 | - |
dc.citation.number | 25 | - |
dc.citation.startPage | 8393 | - |
dc.citation.endPage | 8398 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | CONVERSION | - |
dc.subject.keywordPlus | DEFECTS | - |
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