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An in-plane WSe2 p-n homojunction two-dimensional diode by laser-induced doping

Authors
Yang, SujeongLee, GeonyeopKim, JanghyukYang, SeunghoonLee, Chul-HoKim, Jihyun
Issue Date
7-7월-2020
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.8, no.25, pp.8393 - 8398
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS CHEMISTRY C
Volume
8
Number
25
Start Page
8393
End Page
8398
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/54420
DOI
10.1039/d0tc01790f
ISSN
2050-7526
Abstract
Conventional doping schemes of Si microelectronics are inadequate for atomic-thickness two-dimensional (2D) semiconductors, which makes it challenging to construct 2D p-n homojunctions. Herein, a UV laser-assisted doping method with addressability is proposed for seamlessly building a 2D WSe2 p-n homojunction. WSe2 with ambipolar transport properties was exposed to a focused UV laser to form WOx in a self-limiting and area-selective process that induces hole doping in the underlying WSe2 via electron transfer. Different electrical behaviors, ranging from p-p to p-n in-plane homojunctions, were observed between the as-exfoliated (ambipolar) region and the UV laser-treated (p-doped) region, under the electrostatic modulation of the back-gate bias (V-BG), resulting in the multi-state rectification ratios of 895 (positive V-BG) and similar to 4 (negative V-BG). The evolution of the depletion region in the WSe2 in-plane homojunction was analyzed at different V-BG using the scanning photocurrent mapping approach, yielding a high photocurrent of 1.8 nA for positive V-BG, owing to the development of the p-n junction. Finally, a WSe2-based 2D homogeneous complementary inverter is demonstrated with a voltage gain of 1.8, thereby paving the way for next-generation atomic-thickness circuitry.
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Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles
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