Photo-responsive MoS2/organic-rubrene heterojunction field-effect-transistor: application to photo-triggered ternary inverter
DC Field | Value | Language |
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dc.contributor.author | Park, Cheol-Joon | - |
dc.contributor.author | Park, Hyeon Jung | - |
dc.contributor.author | Kim, Jun Young | - |
dc.contributor.author | Lee, Sang-Hun | - |
dc.contributor.author | Lee, Yongjun | - |
dc.contributor.author | Kim, Jeongyong | - |
dc.contributor.author | Joo, Jinsoo | - |
dc.date.accessioned | 2021-08-30T22:17:09Z | - |
dc.date.available | 2021-08-30T22:17:09Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/55481 | - |
dc.description.abstract | Multivalued logic (MVL) circuits with higher efficiencies, such as the ternary inverter, can be considered as promising structures to overcome the limitation of a binary system. Photo-responsive characteristics of the two-dimensional (2D) MoS2 and the organic-rubrene nanosheet (NS) n-p heterojunction field-effect-transistor (FET) are studied with the aim to construct a novel photo-triggered ternary inverter as a MVL circuit. Anti-ambipolar transistor (AAT) characteristics were observed for the MoS2/organic-rubrene-NS n-p heterojunction FETs. The serially connected devices comprising the AAT with a single MoS2 (n-type)-based FET or with a single rubrene-NS (p-type)-based FET were fabricated to investigate inverter characteristics, which can be advantageous compared to the conventional complementary metal-oxide semiconductor employed in a binary logic circuit. Interestingly, the inverters employing the AAT connected to the p-type rubrene-NS-based FET in series were successfully operated as MVL circuits under light irradiation. The characteristics of new photo-triggered ternary inverters originate from the distinct photo-responsivity of p-type organic-rubrene-NS as well as the positive shift of the threshold voltage of the AAT and p-type rubrene-NS-based FET based on the photo-gating effect, achieved under specific light-irradiation conditions. In this work, a new photo-triggered (i.e. photo-driven) ternary inverter using 2D-MoS2 and organic semiconducting rubrene-NS heterojunction FETs was successfully realized. The heterojunctions of 2D inorganic and organic semiconductors exhibit great potential toward the development of new photo-responsive MVL circuits and multifunctional transistors with extraordinary characteristics and performance including energy saving. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | MULTIPLE-VALUED LOGIC | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | MOS2 | - |
dc.subject | DEVICE | - |
dc.subject | ENERGY | - |
dc.title | Photo-responsive MoS2/organic-rubrene heterojunction field-effect-transistor: application to photo-triggered ternary inverter | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Joo, Jinsoo | - |
dc.identifier.doi | 10.1088/1361-6641/ab843a | - |
dc.identifier.scopusid | 2-s2.0-85086009501 | - |
dc.identifier.wosid | 000536656100001 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.6 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 35 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MULTIPLE-VALUED LOGIC | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordAuthor | molybdenum disulfide | - |
dc.subject.keywordAuthor | rubrene | - |
dc.subject.keywordAuthor | ternary inverter | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordAuthor | photo-gating | - |
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