Photo-responsive MoS2/organic-rubrene heterojunction field-effect-transistor: application to photo-triggered ternary inverter
- Authors
- Park, Cheol-Joon; Park, Hyeon Jung; Kim, Jun Young; Lee, Sang-Hun; Lee, Yongjun; Kim, Jeongyong; Joo, Jinsoo
- Issue Date
- 6월-2020
- Publisher
- IOP PUBLISHING LTD
- Keywords
- molybdenum disulfide; rubrene; ternary inverter; field effect transistor; photo-gating
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 35
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/55481
- DOI
- 10.1088/1361-6641/ab843a
- ISSN
- 0268-1242
- Abstract
- Multivalued logic (MVL) circuits with higher efficiencies, such as the ternary inverter, can be considered as promising structures to overcome the limitation of a binary system. Photo-responsive characteristics of the two-dimensional (2D) MoS2 and the organic-rubrene nanosheet (NS) n-p heterojunction field-effect-transistor (FET) are studied with the aim to construct a novel photo-triggered ternary inverter as a MVL circuit. Anti-ambipolar transistor (AAT) characteristics were observed for the MoS2/organic-rubrene-NS n-p heterojunction FETs. The serially connected devices comprising the AAT with a single MoS2 (n-type)-based FET or with a single rubrene-NS (p-type)-based FET were fabricated to investigate inverter characteristics, which can be advantageous compared to the conventional complementary metal-oxide semiconductor employed in a binary logic circuit. Interestingly, the inverters employing the AAT connected to the p-type rubrene-NS-based FET in series were successfully operated as MVL circuits under light irradiation. The characteristics of new photo-triggered ternary inverters originate from the distinct photo-responsivity of p-type organic-rubrene-NS as well as the positive shift of the threshold voltage of the AAT and p-type rubrene-NS-based FET based on the photo-gating effect, achieved under specific light-irradiation conditions. In this work, a new photo-triggered (i.e. photo-driven) ternary inverter using 2D-MoS2 and organic semiconducting rubrene-NS heterojunction FETs was successfully realized. The heterojunctions of 2D inorganic and organic semiconductors exhibit great potential toward the development of new photo-responsive MVL circuits and multifunctional transistors with extraordinary characteristics and performance including energy saving.
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