Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness
DC Field | Value | Language |
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dc.contributor.author | Kim, Si Nyeon | - |
dc.contributor.author | Chung, Ku Hoon | - |
dc.contributor.author | Choi, Jun Woo | - |
dc.contributor.author | Lim, Sang Ho | - |
dc.date.accessioned | 2021-08-30T23:59:41Z | - |
dc.date.available | 2021-08-30T23:59:41Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-05-15 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/55686 | - |
dc.description.abstract | The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Neel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA.Oe is obtained. (C) 2020 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | MAGNETIC-PROPERTIES | - |
dc.subject | ENHANCEMENT | - |
dc.subject | DEPENDENCE | - |
dc.subject | ANISOTROPY | - |
dc.subject | SENSORS | - |
dc.subject | FILMS | - |
dc.subject | GMR | - |
dc.title | Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lim, Sang Ho | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.153727 | - |
dc.identifier.scopusid | 2-s2.0-85077735392 | - |
dc.identifier.wosid | 000514857400050 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.823 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 823 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | ANISOTROPY | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GMR | - |
dc.subject.keywordAuthor | Magnetic thin films and multilayers | - |
dc.subject.keywordAuthor | Crystal growth | - |
dc.subject.keywordAuthor | Magnetoresistance | - |
dc.subject.keywordAuthor | Domain structure | - |
dc.subject.keywordAuthor | Magnetic measurements | - |
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