Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Dae-Kyu | - |
dc.contributor.author | Choi, Dongsun | - |
dc.contributor.author | Park, Mihyeon | - |
dc.contributor.author | Jeong, Kwang Seob | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-08-31T00:03:42Z | - |
dc.date.available | 2021-08-31T00:03:42Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-05-13 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/55708 | - |
dc.description.abstract | Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr3 QD-LEFET along with an exceptionally wide recombination zone of 80 mu m, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | COMPOSITE FILMS | - |
dc.subject | EMISSION | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | POLYFLUORENE | - |
dc.subject | TRANSPORT | - |
dc.subject | DIODES | - |
dc.title | Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Kwang Seob | - |
dc.identifier.doi | 10.1021/acsami.0c06904 | - |
dc.identifier.scopusid | 2-s2.0-85084696114 | - |
dc.identifier.wosid | 000535246100078 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.19, pp.21944 - 21951 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 12 | - |
dc.citation.number | 19 | - |
dc.citation.startPage | 21944 | - |
dc.citation.endPage | 21951 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | COMPOSITE FILMS | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | POLYFLUORENE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordAuthor | CsPbBr3 quantum dots | - |
dc.subject.keywordAuthor | light-emitting field-effect transistor | - |
dc.subject.keywordAuthor | organic/inorganic hybrid field-effect transistor | - |
dc.subject.keywordAuthor | diffusion length | - |
dc.subject.keywordAuthor | wide recombination zone | - |
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