Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors
- Authors
- Kim, Dae-Kyu; Choi, Dongsun; Park, Mihyeon; Jeong, Kwang Seob; Choi, Jong-Ho
- Issue Date
- 13-5월-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- CsPbBr3 quantum dots; light-emitting field-effect transistor; organic/inorganic hybrid field-effect transistor; diffusion length; wide recombination zone
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.19, pp.21944 - 21951
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 12
- Number
- 19
- Start Page
- 21944
- End Page
- 21951
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/55708
- DOI
- 10.1021/acsami.0c06904
- ISSN
- 1944-8244
- Abstract
- Solution-processable perovskite quantum dots are considered as promising optical materials for light-emitting optoelectronics. Light-emitting field-effect transistors (LEFETs) that can be operated under a relatively lower potential with a high energy conversion efficiency are yet to be realized with perovskite quantum dots. Here, we present the CsPbBr3 quantum dot-based LEFET. Surprisingly, unipolar transport characteristics with strong electroluminescence were observed at the interface of the CsPbBr3 QD-LEFET along with an exceptionally wide recombination zone of 80 mu m, an order of magnitude larger than that of organic/polymer LEFETs. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the heterostructure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.
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