A 300-GHz High-Power High-Efficiency Voltage-Controlled Oscillator With Low Power Variation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dongkyo | - |
dc.contributor.author | Jeon, Sanggeun | - |
dc.date.accessioned | 2021-08-31T01:14:00Z | - |
dc.date.available | 2021-08-31T01:14:00Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56138 | - |
dc.description.abstract | This letter presents a 300-GHz voltage-controlled oscillator (VCO) with high output power and efficiency. The VCO core employs a differential Colpitts topology with inductive degeneration to facilitate a fundamental oscillation at 300 GHz. A common-base output buffer regulates the output power to minimize the power variation during the frequency tuning. The 300-GHz VCO is fabricated in a 130-nm InP double heterojunction bipolar transistor (DHBT) technology. The VCO exhibits a measured frequency tuning range of 9.9 GHz (294.9-304.8 GHz). The peak output power is measured to be 4.7 dBm at 297 GHz. The dc power consumption is 75.6 mW, leading to a high dc-to-RF conversion efficiency of 3.9%. The VCO output power is maintained nearly constant with only a 0.3-dB variation over the entire frequency tuning range. The phase noise is -86.6 dBc/Hz at 10-MHz offset frequency. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TUNING RANGE | - |
dc.subject | VCO | - |
dc.subject | SIGE | - |
dc.title | A 300-GHz High-Power High-Efficiency Voltage-Controlled Oscillator With Low Power Variation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanggeun | - |
dc.identifier.doi | 10.1109/LMWC.2020.2986160 | - |
dc.identifier.scopusid | 2-s2.0-85084916805 | - |
dc.identifier.wosid | 000536289600012 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.5, pp.496 - 499 | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 30 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 496 | - |
dc.citation.endPage | 499 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | TUNING RANGE | - |
dc.subject.keywordPlus | VCO | - |
dc.subject.keywordPlus | SIGE | - |
dc.subject.keywordAuthor | High-power source | - |
dc.subject.keywordAuthor | InP double heterojunction bipolar transistor (DHBT) | - |
dc.subject.keywordAuthor | terahertz source | - |
dc.subject.keywordAuthor | voltage-controlled oscillator (VCO) | - |
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