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A 300-GHz High-Power High-Efficiency Voltage-Controlled Oscillator With Low Power Variation

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dc.contributor.authorKim, Dongkyo-
dc.contributor.authorJeon, Sanggeun-
dc.date.accessioned2021-08-31T01:14:00Z-
dc.date.available2021-08-31T01:14:00Z-
dc.date.created2021-06-18-
dc.date.issued2020-05-
dc.identifier.issn1531-1309-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/56138-
dc.description.abstractThis letter presents a 300-GHz voltage-controlled oscillator (VCO) with high output power and efficiency. The VCO core employs a differential Colpitts topology with inductive degeneration to facilitate a fundamental oscillation at 300 GHz. A common-base output buffer regulates the output power to minimize the power variation during the frequency tuning. The 300-GHz VCO is fabricated in a 130-nm InP double heterojunction bipolar transistor (DHBT) technology. The VCO exhibits a measured frequency tuning range of 9.9 GHz (294.9-304.8 GHz). The peak output power is measured to be 4.7 dBm at 297 GHz. The dc power consumption is 75.6 mW, leading to a high dc-to-RF conversion efficiency of 3.9%. The VCO output power is maintained nearly constant with only a 0.3-dB variation over the entire frequency tuning range. The phase noise is -86.6 dBc/Hz at 10-MHz offset frequency.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectTUNING RANGE-
dc.subjectVCO-
dc.subjectSIGE-
dc.titleA 300-GHz High-Power High-Efficiency Voltage-Controlled Oscillator With Low Power Variation-
dc.typeArticle-
dc.contributor.affiliatedAuthorJeon, Sanggeun-
dc.identifier.doi10.1109/LMWC.2020.2986160-
dc.identifier.scopusid2-s2.0-85084916805-
dc.identifier.wosid000536289600012-
dc.identifier.bibliographicCitationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.5, pp.496 - 499-
dc.relation.isPartOfIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.citation.titleIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.citation.volume30-
dc.citation.number5-
dc.citation.startPage496-
dc.citation.endPage499-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusTUNING RANGE-
dc.subject.keywordPlusVCO-
dc.subject.keywordPlusSIGE-
dc.subject.keywordAuthorHigh-power source-
dc.subject.keywordAuthorInP double heterojunction bipolar transistor (DHBT)-
dc.subject.keywordAuthorterahertz source-
dc.subject.keywordAuthorvoltage-controlled oscillator (VCO)-
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공과대학 (전기전자공학부)
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