Controllable doping and passivation of ZnO thin films by surface chemistry modification to design low-cost and high-performance thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Donggyu | - |
dc.contributor.author | Woo, Ho Kun | - |
dc.contributor.author | Lee, Yong Min | - |
dc.contributor.author | Kim, Yuna | - |
dc.contributor.author | Choi, Ji-Hyuk | - |
dc.contributor.author | Oh, Soong Ju | - |
dc.date.accessioned | 2021-08-31T02:13:32Z | - |
dc.date.available | 2021-08-31T02:13:32Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-04-15 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56308 | - |
dc.description.abstract | Solution-processed metal oxide thin-film transistors have become more popular as they can be used to fabricate transparent and flexible electronics at low cost. However, additional and complex processes for trap-site passivation and doping hinder the potential of the low-cost solution process. This study introduces a surface passivation process involving treatment with 3-aminopropyltriethoxysilane (APTES) that can enhance the electrical properties of ZnO sol-gel thin films. Optical, chemical, and structural analyses of ZnO sol-gel thin films revealed that their trap sites were passivated successfully through APTES treatment under basic conditions. Taking advantage of this process, high-mobility and negligible-hysteresis ZnO thin-film transistors were successfully fabricated, showing an I-on/I-off of 10(5), hysteresis as low as 1.13 V, and mobility of up to 0.117 cm(2)/Vs. Furthermore, a characteristic transition of ZnO sol-gel thin films from semiconductive to semimetallic was observed during investigations with various APTES concentrations. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | MUSSEL INSPIRED CHEMISTRY | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | LOW-TEMPERATURE | - |
dc.subject | NANOPARTICLES | - |
dc.subject | NANOWIRE | - |
dc.subject | REMOVAL | - |
dc.subject | LAYER | - |
dc.subject | AL | - |
dc.title | Controllable doping and passivation of ZnO thin films by surface chemistry modification to design low-cost and high-performance thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Soong Ju | - |
dc.identifier.doi | 10.1016/j.apsusc.2020.145289 | - |
dc.identifier.scopusid | 2-s2.0-85078197801 | - |
dc.identifier.wosid | 000514827600009 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.509 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 509 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MUSSEL INSPIRED CHEMISTRY | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | NANOWIRE | - |
dc.subject.keywordPlus | REMOVAL | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | AL | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Surface passivation | - |
dc.subject.keywordAuthor | Controllable doping | - |
dc.subject.keywordAuthor | Characterization transition | - |
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