Controllable doping and passivation of ZnO thin films by surface chemistry modification to design low-cost and high-performance thin film transistors
- Authors
- Kim, Donggyu; Woo, Ho Kun; Lee, Yong Min; Kim, Yuna; Choi, Ji-Hyuk; Oh, Soong Ju
- Issue Date
- 15-4월-2020
- Publisher
- ELSEVIER
- Keywords
- Sol-gel; Thin film; Surface passivation; Controllable doping; Characterization transition
- Citation
- APPLIED SURFACE SCIENCE, v.509
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 509
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/56308
- DOI
- 10.1016/j.apsusc.2020.145289
- ISSN
- 0169-4332
- Abstract
- Solution-processed metal oxide thin-film transistors have become more popular as they can be used to fabricate transparent and flexible electronics at low cost. However, additional and complex processes for trap-site passivation and doping hinder the potential of the low-cost solution process. This study introduces a surface passivation process involving treatment with 3-aminopropyltriethoxysilane (APTES) that can enhance the electrical properties of ZnO sol-gel thin films. Optical, chemical, and structural analyses of ZnO sol-gel thin films revealed that their trap sites were passivated successfully through APTES treatment under basic conditions. Taking advantage of this process, high-mobility and negligible-hysteresis ZnO thin-film transistors were successfully fabricated, showing an I-on/I-off of 10(5), hysteresis as low as 1.13 V, and mobility of up to 0.117 cm(2)/Vs. Furthermore, a characteristic transition of ZnO sol-gel thin films from semiconductive to semimetallic was observed during investigations with various APTES concentrations.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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