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Study on the Source-Drain Contact Properties by selective self assembled treatment (SST) method for organic thin film transistor

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dc.contributor.authorHong MunPyo-
dc.date.accessioned2021-08-31T02:32:18Z-
dc.date.available2021-08-31T02:32:18Z-
dc.date.created2021-04-22-
dc.date.issued2008-07-07-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/56485-
dc.publisherMaterials Research Society-
dc.subjectOTFT, Contact, SAM, SST-
dc.titleStudy on the Source-Drain Contact Properties by selective self assembled treatment (SST) method for organic thin film transistor-
dc.typeConference-
dc.contributor.affiliatedAuthorHong MunPyo-
dc.identifier.bibliographicCitationOrganic Microelectronic and Optoelectronics Workshop IV, pp.18-
dc.relation.isPartOfOrganic Microelectronic and Optoelectronics Workshop IV-
dc.relation.isPartOfOrganic Microelectronic Proceeding-
dc.citation.titleOrganic Microelectronic and Optoelectronics Workshop IV-
dc.citation.startPage18-
dc.citation.endPage18-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceSan Francisco, USA-
dc.citation.conferenceDate2008-07-07-
dc.type.rimsCONF-
dc.description.journalClass1-
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