A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
DC Field | Value | Language |
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dc.contributor.author | Kim, Kwan-Ho | - |
dc.contributor.author | Park, Hyung-Youl | - |
dc.contributor.author | Shim, Jaewoo | - |
dc.contributor.author | Shin, Gicheol | - |
dc.contributor.author | Andreev, Maksim | - |
dc.contributor.author | Koo, Jiwan | - |
dc.contributor.author | Yoo, Gwangwe | - |
dc.contributor.author | Jung, Kilsu | - |
dc.contributor.author | Heo, Keun | - |
dc.contributor.author | Lee, Yoonmyung | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-08-31T04:34:30Z | - |
dc.date.available | 2021-08-31T04:34:30Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-04-01 | - |
dc.identifier.issn | 2055-6756 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56673 | - |
dc.description.abstract | For increasing the restricted bit-density in the conventional binary logic system, extensive research efforts have been directed toward implementing single devices with a two threshold voltage (V-TH) characteristic via the single negative differential resistance (NDR) phenomenon. In particular, recent advances in forming van der Waals (vdW) heterostructures with two-dimensional crystals have opened up new possibilities for realizing such NDR-based tunneling devices. However, it has been challenging to exhibit three V-TH through the multiple-NDR (m-NDR) phenomenon in a single device even by using vdW heterostructures. Here, we show them-NDR device formed on a BP/(ReS2 + HfS2) type-III double-heterostructure. This m-NDR device is then integrated with a vdW transistor to demonstrate a ternary vdW latch circuit capable of storing three logic states. Finally, the ternary latch is extended toward ternary SRAM, and its high-speed write and read operations are theoretically verified. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | TRANSISTOR | - |
dc.subject | DIODES | - |
dc.subject | PERFORMANCE | - |
dc.subject | CONTACTS | - |
dc.subject | ENERGY | - |
dc.title | A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1039/c9nh00631a | - |
dc.identifier.scopusid | 2-s2.0-85082775824 | - |
dc.identifier.wosid | 000527781900012 | - |
dc.identifier.bibliographicCitation | NANOSCALE HORIZONS, v.5, no.4, pp.654 - 662 | - |
dc.relation.isPartOf | NANOSCALE HORIZONS | - |
dc.citation.title | NANOSCALE HORIZONS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 654 | - |
dc.citation.endPage | 662 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | ENERGY | - |
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