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Etching Characteristics and Mechanism of VO2 in inductively coupled plasma

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dc.contributor.authorHong MunPyo-
dc.date.accessioned2021-08-31T05:29:02Z-
dc.date.available2021-08-31T05:29:02Z-
dc.date.created2021-04-22-
dc.date.issued2008-06-24-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/56933-
dc.publisherCenter for Frontier Materials and Micro/Nano Science and Technology, NCKU-
dc.subjectEtching characteristics, VO2 film-
dc.titleEtching Characteristics and Mechanism of VO2 in inductively coupled plasma-
dc.typeConference-
dc.contributor.affiliatedAuthorHong MunPyo-
dc.identifier.bibliographicCitationThe 4th Asia Pacific Conference on Transducers and Micro/Nano Technology, pp.71-
dc.relation.isPartOfThe 4th Asia Pacific Conference on Transducers and Micro/Nano Technology-
dc.relation.isPartOfProceeding on the 4th Asia Pacific Conference on Transducers and Micro/Nano Technology-
dc.citation.titleThe 4th Asia Pacific Conference on Transducers and Micro/Nano Technology-
dc.citation.startPage71-
dc.citation.endPage71-
dc.citation.conferencePlaceCH-
dc.citation.conferencePlacetainan, Taiwan-
dc.citation.conferenceDate2008-06-22-
dc.type.rimsCONF-
dc.description.journalClass1-
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