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A New Edge Termination Technique to Improve Voltage Blocking Capability and Reliability of Field Limiting Ring for Power Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sung, Man Young | - |
| dc.date.accessioned | 2021-08-31T05:48:10Z | - |
| dc.date.available | 2021-08-31T05:48:10Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2008-06-03 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/57143 | - |
| dc.publisher | IEEE | - |
| dc.subject | Power Semiconductor, Edge Termination, Field Limiting Ring, Trench Etch | - |
| dc.title | A New Edge Termination Technique to Improve Voltage Blocking Capability and Reliability of Field Limiting Ring for Power Devices | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Sung, Man Young | - |
| dc.identifier.bibliographicCitation | 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT) | - |
| dc.relation.isPartOf | 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT) | - |
| dc.relation.isPartOf | Proceedings of 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT | - |
| dc.citation.title | 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT) | - |
| dc.citation.conferencePlace | FR | - |
| dc.citation.conferencePlace | Minatec Grenoble, France | - |
| dc.citation.conferenceDate | 2008-06-02 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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