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A New Edge Termination Technique to Improve Voltage Blocking Capability and Reliability of Field Limiting Ring for Power Devices
- Authors
- Sung, Man Young
- Keywords
- Power Semiconductor, Edge Termination, Field Limiting Ring, Trench Etch
- Issue Date
- 3-6월-2008
- Publisher
- IEEE
- Citation
- 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT)
- Conference Name
- 2008 IEEE International Conference on Integrated Circuit Design and Technology(ICICDT)
- Place
- FR
Minatec Grenoble, France
- Conference Date
- 2008-06-02
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Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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